Samsung Electronics Projects HBM to Reach 30% of DRAM Wafer Production Capacity in 2027

Samsung Electronics Executive Vice President Kim Taewoo announced that High Bandwidth Memory (HBM) is anticipated to constitute nearly 30% of the total wafer production capacity for Dynamic Random-Access Memory (DRAM) manufacturers in 2027, an increase from the current 20%. This shift indicates a growing competition between HBM and traditional DRAM for wafer capacity, which may lead to a reduction in the supply of conventional DRAM as HBM production ramps up.

TrendForce, a market research firm, has projected that by the end of 2027, HBM wafer input from the three leading global suppliers will account for approximately 30% of total DRAM wafer input. However, in terms of storage capacity, HBM is expected to contribute only about 13% of the overall DRAM supply. This discrepancy highlights the specialized nature of HBM compared to traditional DRAM.

In February 2026, Samsung commenced mass production and shipment of HBM4, with 12-layer HBM4E samples provided to clients such as NVIDIA in May. The company is expected to increase its monthly wafer input for HBM from around 180,000 wafers this year to approximately 250,000 wafers next year. As demand for AI servers continues to rise, both HBM and general DRAM will compete for limited advanced process capacity, resulting in a tight storage supply through 2027. TrendForce has also raised its price expectations for HBM, forecasting a year-on-year increase of 121% in the average selling price by 2027.

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Source: KLEA News