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      Samsung Electronics Develops New zNAND Models for AI Storage Solutions

      Samsung Electronics is set to enhance its next-generation NAND flash memory technology, zNAND, by introducing three distinct models: zNAND-O, zNAND-T, and zNAND-I. This initiative aims to meet the growing demand for customized storage solutions in artificial intelligence (AI) infrastructure. While the zNAND-O model has already been publicly announced, the other two models are currently in the early development stages, as reported by ZDNet Korea on October 12, 2026.

      The zNAND-O model is designed for edge AI applications and features a unique vertical stacking method that utilizes silicon vias to improve data transmission speed and energy efficiency. This model was first showcased at a memory-related event in the United States in August 2026. In contrast, the zNAND-T model targets high-capacity AI data centers, focusing on throughput and high performance, and is recognized in the industry as high-bandwidth flash memory due to its enhanced bandwidth capabilities.

      The zNAND-I model is tailored for applications requiring high input/output operations per second, particularly for processing small-capacity temporary data like key-value caches in AI inference tasks. This development comes as competitors, such as SK Hynix, are also advancing their own AI NAND product series, indicating a competitive landscape in the AI storage market.

      © 2026 KLEA News. All Rights Reserved. This article is provided for informational purposes only. It is not offered or intended to be used as legal, tax, investment, financial, or other advice.

      Source: KLEA News

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