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      Changxin Storage Advances 4F² Memory Architecture, Plans Server Memory Launch by End of 2026

      Changxin Storage (CXMT), a Chinese memory chip manufacturer, has announced significant progress in developing a new storage architecture known as 4F². This advancement was revealed by the company's president, Cao Kanyu, during an industry event held in Shanghai, China. The 4F² architecture allows each memory cell to occupy an area of 4F², where F represents the minimum line width of the semiconductor, potentially enhancing storage density and efficiency.

      The company plans to introduce new server memory products utilizing this innovative architecture by the end of 2026. This move aligns with similar advancements being pursued by major competitors, including Samsung Electronics and SK Hynix, who are also working on technologies aimed at increasing storage density in memory chips.

      Currently, the standard for commercial DRAM memory uses a 6F² cell structure. Changxin Storage's proprietary transistor design aims to accommodate more memory cells on a single chip, which could lead to improved performance and efficiency in server memory applications.

      © 2026 KLEA News. All Rights Reserved. This article is provided for informational purposes only. It is not offered or intended to be used as legal, tax, investment, financial, or other advice.

      Source: KLEA News

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