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      Changxin Storage Aims for Increased DRAM Production Capacity by Year-End

      Changxin Storage, a Chinese DRAM manufacturer, is set to enhance its monthly production capacity to approximately 350,000 wafers by the end of 2026. This increase positions the company close to Micron, which estimates its production capacity at around 375,000 wafers during the same timeframe. The cleanroom construction cycle for Changxin Storage is notably shorter than the industry average, taking about 12 months compared to the typical 21 to 24 months.

      Despite facing U.S. sanctions that limit access to extreme ultraviolet (EUV) lithography technology, Changxin Storage is utilizing older deep ultraviolet (DUV) lithography and multi-patterning techniques for its production. The company has commenced shipments of 16 Gb DDR5 chips operating at a speed of 8000 MT/s, featuring a chip area of 67 mm² and a density of 0.239 Gb/mm², with the latest generation G4 unit being 20% smaller than its predecessor, the G3.

      In addition to the DDR5 chips, Changxin Storage is also mass-producing 24 Gb modules at approximately 6000 MT/s and LPDDR5X-10667 modules in both 12 Gb and 16 Gb configurations. The Chinese government is actively supporting Changxin Storage in transferring DRAM intellectual property to domestic manufacturers, including JHICC, Swaysure, and Yangtze Memory Technologies (XMC). This initiative is part of a broader strategy to bolster the domestic semiconductor industry in China.

      © 2026 KLEA News. All Rights Reserved. This article is provided for informational purposes only. It is not offered or intended to be used as legal, tax, investment, financial, or other advice.

      Source: KLEA News

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